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| 30 4V 25 20 10V 4.5V 3.5V 20 Vds=5V 16 Id (A) Id (A) 12 125C 8 15 10 Vgs=3V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 28 25C 4 0 1.5 2 2.5 3 3.5 4 Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance 26 Vgs=4.5V Vgs=10V Id=8.5A 1.4 Vgs=4.5V 1.2 Rds(on) (m:) 24 22 20 18 16 14 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=10V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 1.0E+00 40 Rds(on) (m:) Id=8.5A 1.0E-01 Is (A) 125C 1.0E-02 25C 1.0E-03 30 125C 20 25C 1.0E-04 1.0E-05 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vds=15V Id=8.5A 1500 1250 Capacitance (pF) Ciss 1000 750 500 250 0 Crss 0 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 Vgs (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics Coss 100.0 Rds(on) limited 10.0 1ms 10ms 0.1s 1.0 Tj(max.)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 100Ps 10Ps 50 40 Tj(max.)=150C Ta=25C Power (W) Id (Amps) 30 20 10 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 30 -10V 25 -4V 20 -5V 30 25 20 Vds=-5V -Id (A) -Id (A) -3.5V Vgs=-3V 15 10 5 0 0 1 2 3 4 5 -Vds (Volts) Fig 16: On-Region Characteristics 15 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -Vgs (Volts) Figure 17: Transfer Characteristics 1.6 125C 25C 40 Normalized On-Resistance 35 Vgs=-4.5V Id=-7.1A 1.4 Vgs=-10V Rds(on) (m:) 30 25 Vgs=-10V 20 15 10 0 5 10 15 20 25 -Id (A) Figure 18: On-Resistance vs. Drain Current and Gate Voltage 60 Id=-7.1A 50 1.2 Vgs=-4.5V Id=-5.6A 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 19: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 Rds(on) (m:) 125C 125C 30 -Is (A) 40 1.0E-02 1.0E-03 1.0E-04 20 25C 1.0E-05 1.0E-06 25C 10 3 4 5 6 7 8 9 10 -Vgs (Volts) Figure 20: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 21: Body-Diode Characteristics 10 Vds=-15V Id=-7.1A 8 2250 2000 1750 Ciss Capacitance (pF) -Vgs (Volts) 1500 1250 1000 750 500 250 Coss Crss 6 4 2 0 0 4 8 12 16 20 24 28 32 -Qg (nC) Figure 22: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 23: Capacitance Characteristics 100.0 Tj(max.)=150C, Ta=25C Rds(on) limited 0.1s 10Ps 100Ps 1ms 10ms 1.0 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 24: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 40 Tj(max.)=150C Ta=25C 30 -Id (Amps) Power (W) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 25: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance 10 125C 250 f = 1MHz Capacitance (pF) 25C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 200 If (Amps) 150 0.1 100 0.01 50 0.001 0 0 5 10 15 20 25 30 Vka (Volts) Figure 13: Schottky Capacitance Characteristics Vf (Volts) Figure 12: Schottky Forward Characteristics 0.7 100 If=3A 0.5 Leakage Current (mA) 0.6 10 1 Vr=30V 0.1 0.01 0.001 Vf (Volts) 0.4 If=1A 0.3 0.2 0.1 0 25 50 75 100 125 Temperature (C) 150 175 0 25 50 75 100 125 150 175 Figure 14: Schottky Forward Drop vs. Junction Temperature 10 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature ZTja Normalized Transient Thermal Resistance 1 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance |
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